N -type behavior of ferroelectric-gate carbon nanotube network transistor

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Cheah, Jun Wei ^a   Shi, Yumeng ^a   Ong, Hock Guan ^a   Lee, Chun Wei ^a   Li, Lain Jong ^a   Wang, Junling ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPUTER NETWORKS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); MODULATION; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; SCHOTTKY BARRIER DIODES; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBE FIELD-EFFECT TRANSISTOR; FERROELECTRIC MATERIALS; SPONTANEOUS POLARIZATIONS;

CARBON NANOTUBES;

EID: 51349139859     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2975158     Document Type: Article

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