Electrical heating process for p-type to n-type conversion of carbon nanotube field effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1603-1605

  Kamimura, Takafumi ^a,c   Matsumoto, Kazuhiko ^a,b,c  

^a OSAKA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Adsorption; Carbon nanotube; Desorption; Doping; Electrical heating; N type; Oxygen molecule

Indexed keywords

CARBON NANOTUBES; CATALYSTS; CURRENT VOLTAGE CHARACTERISTICS; DESORPTION; DOPING (ADDITIVES); ELECTRIC HEATING; ELECTRODES; FERMI LEVEL;

DRAIN ELECTRODES; DRAIN VOLTAGE; N-TYPE; OXYGEN MOLECULES;

FIELD EFFECT TRANSISTORS;

EID: 21244446231     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1603     Document Type: Article

References (6)

1. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff and Ph. Avouris: Phys. Rev. Lett. 87 (2001) 256805.
2. V. Derycke, R. Martel, J. Appenzeller and Ph. Avouris: Appl. Phys. Lett. 80 (2002) 2773.
3. T. Yamada: Phys. Rev. B 69 (2004) 125408.
4. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981).
5. R. Gao, Z. Pan and Z. L. Wanga: Appl. Phys. Lett. 78 (2001) 1757.
6. J. A. Misewich, R. Martel, Ph. Avouris, J. C. Tsang, S. Heinze and J. Tersoff: Science 300 (2003) 783.