Influence of initial surface reconstruction on the interface structure of HfO 2 /GaAs

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7565-7568

  Yasuda, Tetsuji ^a   Miyata, Noriyuki ^a   Ohtake, Akihiro ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

GaAs; HfO 2; High k dielectrics; III V semiconductor; MOS interface; RDS; XPS

Indexed keywords

GALLIUM ARSENIDE; HAFNIUM OXIDES; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; INTERFACE STATES; IRIDIUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING STRUCTURE; ELECTRICAL CHARACTERIZATION; ELECTRON BEAM EVAPORATION; FERMI LEVEL PINNING; GAAS; HFO2; INTERFACE STRUCTURES; MOS INTERFACE;

SURFACE RECONSTRUCTION;

EID: 51249113849     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.01.032     Document Type: Article

References (24)

1. Hong M., Kwo J., Kortan A.R., Mannaerts J.P., and Sergent A.M. Science 283 (1999) 1897
2. Passlack M. In: Demkov A.A., and Navrotsky A. (Eds). Materiaqls Fundamentals of Gate Dielectrics (2005), Springer, Netherlands (Chapter 12)
3. Goel N., Majhi P., Chui C.O., Tsai W., Choi D., and Harris J.S. Appl. Phys. Lett. 89 (2006) 163517
4. Xuan Y., Lin H.C., Ye P.D., and Wilk G.D. Appl. Phys. Lett. 88 (2006) 263518
5. Shahrjerdi D., Oye M.M., Holmes Jr. A.L., and Banerjee S.K. Appl. Phys. Lett. 89 (2006) 043501
6. Zhu F., Koveshnikov S., Ok I., Kim H.S., Zhang M., Lee T., Thareja G., Yu L., Lee J.C., Tsai W., Tokranov V., Yakimov M., and Oktyabrsky S. Appl. Phys. Lett. 91 (2007) 043507
7. Web D.J., Fompeyrine J., Nakagawa S., Dimoulas A., Rossel C., Sousa M., Germann R., Alvarado S.F., Locquet J.P., Marchiori C., Siegwart H., Callegari A., Kiewra E., Sun Y., De Souza J., and Hoffmann N. Microelectron. Eng. 84 (2007) 2142
8. Park D.-G., Chen Z., Diatezua D.M., Wang Z., Rockett A., Morkoc H., and Alterovitz S.A. Appl. Phys. Lett. 70 (1997) 1263
9. Li W.P., Wang X.W., Liu Y.X., Shim S.I., and Ma T.P. Appl. Phys. Lett. 90 (2007) 193503
10. Gao F., Lee S.J., Chi D.Z., Balakumar S., and Kwong D.-L. Appl. Phys. Lett. 90 (2007) 252904
11. Ohtake A., Kocán P., Nakamura J., Natori A., and Koguchi N. Phys. Rev. Lett. 92 (2004) 236105
12. Ohtake A. Phys. Rev. B 74 (2006) 165322
13. Ohtake A., Kocán P., Seino K., Schmidt W.G., and Koguchi N. Phys. Rev. Lett. 93 (2004) 266101
14. Miyata N. Appl. Phys. Lett. 89 (2006) 102903
15. Abe Y., Miyata N., Shiraki Y., and Yasuda T. Appl. Phys. Lett. 90 (2007) 172906
16. Sauvage-Simikin M., Pinchaux R., Massies J., Calverie P., Jedrecy N., Bonnet J., and Robinson I.K. Phys. Rev. Lett. 62 (1989) 563
17. Chadi D.J. J. Vac. Sci. Technol. A 5 (1987) 834
18. Arabasz S., Bergignat E., Hollinger G., and Szuber J. Appl. Surf. Sci. 252 (2006) 7659
19. Pun A.F., Wang X., Durbin S.M., and Zheng J.P. Thin Solid Films 515 (2007) 4419
20. Aspnes D.E., and Studna A.A. Phys. Rev. Lett. 54 (1985) 1956
21. Yasuda T. This Solid Films 313-314 (1998) 544
22. T. Yasuda, unpublished data.
23. Meiners L.G. In: Wilmsen C.W. (Ed). Physics and Chemistry of III-V Compound Semiconductor Interfaces (1985), Plenum Press, New York Chapter 4
24. Martens K., Wang W., De Keersmaecker K., Borghs G., Groeseneken G., and Maes H. Microelectron. Eng. 84 (2007) 2146