Multiscale simulation of MOS systems based on high-κ oxides

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 398-402

  Auf der Maur, Matthias ^a   Povolotskyi, Michael ^a   Sacconi, Fabio ^a   Pecchia, Alessandro ^a   Di Carlo, Aldo ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Device simulation; High ; Multiscale; Tunneling

Indexed keywords

HAFNIUM COMPOUNDS;

DEVICE SIMULATION; MULTI-SCALE SIMULATIONS; MULTISCALE; TUNNELING;

MOSFET DEVICES;

EID: 50949124317     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-007-0160-8     Document Type: Article

References (14)

1. International Technology Roadmap for Semiconductors (2005)
2. Robertson, J.: High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys. 69, 327-396 (2006)
3. TiberCAD device simulation package, www.tibercad.org
4. Kawamoto, A., Jameson, J., Cho, K., Dutton, R.W.: Challenges for atomic scale modeling in alternative gate stack engineering. IEEE Trans. Electron Devices 47, 1787 (2000)
5. Sacconi, F., Jancu, J.M., Povolotskyi, M., Di Carlo, A.: Full band tunneling in high-κ oxide MOS structures. IEEE Trans. Electron Devices 54, 3168 (2007)
6. The ABINIT code is a common project of the Université Catholique de Louvain, Corning Incorporated, and other contributors (http:// www.abinit.org)
7. 2 interfaces. Phys. Rev. B 73, 075328 (2006)
8. Di Carlo, A.: Microscopic theory of nanostructured semiconductor devices: Beyond the envelope-function approximation. Semicond. Sci. Technol. 18, R1 (2003)
9. Sacconi, F., Di Carlo, A., Lugli, P., Stadele, M., Jancu, J.M.: Full band approach to tunneling in MOS structures. IEEE Trans. Electron Devices 51(5), 741-748 (2004)
10. 2 gate oxides from microscopic models. J. Appl. Phys 89, 348 (2001)
11. 4/Si interfaces. Phys. Rev. B 69, 155329 (2004)
12. 2/Si interfaces. J. Appl. Phys. 96, 2701 (2004)
13. 2 n-channel MOS capacitor. IEEE Trans. Electron Devices 49, 11 (2002)
14. Selberherr, S.: Analysis and Simulation of Semiconductor Devices. Springer, New York (1984)