New nanometer T-gate fabricated by thermally reflowed resist technique

Japanese Journal of Applied Physics

Volumn 41, Issue 12B, 2002, Pages L1508-L1510

  Lee, Huang Ming ^a   Chang, Edward Yi ^a   Chen, Szu Hung ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Electron beam lithography; Lift off process; Monolithic microwave integrated circuit; Nanometer T gate; Reflowed resist technique

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON GUNS; GALLIUM ARSENIDE; INTEGRATED CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM;

ELECTRON-GUN EVAPORATION; GAAS MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC); LIFT-OFF PROCESS; OPTIMIZED CONDITIONS; REFLOW TEMPERATURES; REFLOWED RESIST TECHNIQUE; RESIST STRUCTURES; T-GATES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 3042629464     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.41.L1508     Document Type: Article

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