A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6440-6446

  Lai, Yeong Lin ^a   Chang, Edward Y ^a   Chang, Chun Yen ^b   Yang, Hung Pin D ^c   Nakamura, K ^a   Shy, S L ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Deep UV resist; Electron beam lithography; Electron beam resist; GaAs process; T shaped gate; Tri layer resist

Indexed keywords

EID: 0010316347     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6440     Document Type: Article

References (30)

1. Y. L. Lai, E. Y. Chang, C. Y. Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H. Chen and C. T. Lee: IEEE Electron Device Lett. 17 (1996) 229.
2. E. Y. Chang, K. C. Lin, E. H. Liu, C. Y. Chang, T. H. Chen and J. Chen: IEEE Electron Device Lett. 15 (1994) 277.
3. I. Thayne, M. Holland, Y. C. Chen, W. Q. Li, A. Paulsen, S. Beaumont and P. Bhattacharya: Int. Electron Device Meet. Tech. Dig. (1993) p. 225.
4. I. G. Thayne, G. U. Jensen, M. C. Holland, Y. Chen, W. Li, A. Paulsen, J. H. Davies, S. P. Beaumont and P. K. Bhattacharya: IEEE Trans. Electron Devices 42 (1995) 2047.
5. N. Yoshida, T. Kitano, Y. Yamamoto, K. Katoh, H. Minami, H. Takano, T. Sonoda, S. Takamiya and S. Mitsui: IEEE MTT-S Tech. Dig. (1994) p. 645.
6. N. Yoshida, Y. Yamamoto, K. Katoh, H. Minami, T. Kitano, H. Takano, T. Sonoda, S. Takamiya and S. Mitsui: Electron. Lett. 30 (1994) 1009.
7. T. Katoh, N. Yoshida, H. Minami, T. Kashiwa and S. Orisaka: IEEE MTT-S Tech. Dig. (1993) p. 337.
8. K. Joshin, Y. Mimino, S. Ohmura and Y. Hirachi: IEEE Trans. Electron Devices 39 (1992) 515.
9. E. Y. Chang, J. M. Van Hove and K. P. Pande: IEEE Trans. Electron Devices 35 (1988) 1580.
10. K. Onodera, K. Nishimura, K. Asai and S. Sugitani: IEEE Trans. Electron Devices 40 (1993) 18.
11. J. Udomoto, S. Chaki, M. Komaru, T. Kunii, Y. Kohno, S. Goto, K. Gotoh, A. Inoue, N. Tanino, T. Takagi and O. Ishihara: IEEE MTT-S Tech. Dig. (1995) p. 339.
12. M. Funabashi, K. Hosoya, K. Ohata, K. Onda, N. Iwata and M. Kuzuhara: IEEE GaAs IC Symp. Tech. Dig. (1993) p. 379.
13. H. Hida, M. Tokushima, M. Fukaishi, T. Maeda and Y. Ohno: Int. Electron Device Meet. Tech. Dig. (1992) p. 982.
14. T. Matsumura, M. Kanamori, Y. Oikawa and S. Shinozaki: IEEE MTT-S Tech. Dig. (1993) p. 1481.
15. N. Iwata, M. Tomita and M. Kuzuhara: Electron. Lett. 29 (1993) 628.
16. J. Dickmann, K. Riepe, H. Haspeklo, B. Maile, H. Daembkes, H. Nickel, R. Lch and W. Schlapp: Electron. Lett. 28 (1992) 1849.
17. Y. Hori, K. Onda, M. Funabashi, H. Mizutani, K. Maruhashi, A. Fujihara, K. Hosoya, T. Inoue and M. Kuzuhara: IEEE MTT-S Tech. Dig. (1995) p. 431.
18. P. C. Chao, P. M. Smith, S. Wanuga, J. C. M. Hwang and W. H. Perkins: Int. Electron Device Meet. Tech. Dig. (1983) p. 613.
19. A. Hulsmann, E. Muhlfriedel, B. Raynor, K. Glorer, W. Bronner, K. Kohler, J. Schneider, J. Braunstein, M. Schlechtweg, P. Tasker, A. Thiede and T. Jakobus: Microelectron. Eng. 23 (1994) 437.
20. R. E. Howard, E. L. Hu and L. D. Jackel: IEEE Trans. Electron Devices 28 (1981) 1378.
21. D. F. Kyser and N. S. Viswanathan: J. Vac. Sci. & Technol. 12 (1975) 1305.
22. M. Parikh and D. F. Kyser: J. Appl. Phys. 50 (1979) 1104.
23. J. S. Greeneich and T. V. Duzer: IEEE Trans. Electron Devices 21 (1974) 286.
24. P. Lamarre and M. P. Zaitlin: IEEE Trans. Electron Devices 35 (1988) 2422.
25. M. Matsumura, K. Tsutsui and Y. Naruke: Electron. Lett. 17 (1981) 429.
26. G. M. Metze, A. Cornfeld, E. Carlson, G. Dahrooge, E. Chang, J. Singer, J. Bass, H. L. Hung and T. Lee: IEEE Electron Device Lett. 10 (1989) 165.
27. K. C. Lin, E. Y. Chang, S. P. Wang, Y. L. Lai and C. Y. Chang: Jpn. J. Appl. Phys. 33 (1994) 4546.
28. N. Kato, T. Mizutani, S. Ishida and M. Ohmori: IEEE Trans. Electron Devices 27 (1980) 1098.
29. Y. Jin, B. Etienne, F. Pardo, G. Faini and H. Launois: Microelectron. Eng. 11 (1990) 113.
30. M. Hatzakis: J. Vac. Sci. & Technol. 12 (1975) 1276.