Hot-electron degradation in hydrogenated amorphous-silicon-nitride thin-film diodes

Journal of Applied Physics

Volumn 89, Issue 10, 2001, Pages 5491-5496

  Oversluizen, G ^a   Zieren, V ^a   Johnson, M T ^a   Van Der Put, A A ^a   Lodders, W H M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035872979     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1364652     Document Type: Article

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