High performance III-V MOSFETs: A dream close to reality?

IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications

Volumn 2002-January, Issue , 2002, Pages 243-248

  Kalna, K ^a   Yang, L ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Germanium silicon alloys; High K dielectric materials; High K gate dielectrics; III V semiconductor materials; Indium gallium arsenide; Insulation; MOSFETs; Semiconductor device manufacture; Silicon germanium; Substrates

Indexed keywords

BICMOS TECHNOLOGY; DIELECTRIC MATERIALS; ELECTRON DEVICES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GATE DIELECTRICS; GERMANIUM; GERMANIUM ALLOYS; INDIUM ALLOYS; INSULATION; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; SUBSTRATES;

GERMANIUM SILICON ALLOY; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS; II-IV SEMICONDUCTORS; INDIUM GALLIUM ARSENIDE; MOSFETS; SILICON GERMANIUM;

MOSFET DEVICES;

EID: 50549097283     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDMO.2002.1174965     Document Type: Conference Paper

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