Very high performance GaN HEMT devices by optimized buffer and field plate technology

Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Volumn , Issue , 2006, Pages 61-64

  Romanini, P ^a   Peroni, M ^a   Lanzieri, C ^a   Cetronio, A ^a   Calori, M ^a   Passaseo, A ^b   Poti, B ^b   Chini, A ^c   Mariucci, L ^d   Di Gaspare, A ^d   Teppati, V ^e   Camarchia, V ^e  

^a SELEX SISTEMI INTEGRATI   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d IFN CNR   (Italy)

^e POLITECNICO DI TORINO   (Italy)

Author keywords

Electron beam lithography; Epitaxial growth; MODFETs; Power FETs; Semiconductor device breakdown

Indexed keywords

BIAS VOLTAGE; BUFFER CIRCUITS; ELECTRIC BREAKDOWN; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MICROWAVE DEVICES;

ACTIVE DEVICE ISOLATION; FIELD PLATE TECHNOLOGY; SEMICONDUCTOR DEVICE BREAKDOWN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41549094148     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2006.282750     Document Type: Conference Paper

References (8)

1. J. S. Moon, Shihchang Wu, D. Wong, I. Milosavljevic, A. Conway, P. Hashimoto, M. Hu, M. Antcliffe. and M. Micovic, IEEE El. Dev.Lett., 26, NO. 6, 348 (2005)
2. S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 81, 439 (2002)
3. C.-Y. Hwang, M. J. Schurman, W. E. Mayo, Y.-C. Lu, R. A. Stall, and T.Salagaj, J. Electron. Mater. 26, 243 (1997)
4. S. Heikman*, S. Keller, T. Mates, S.P. DenBaars, U.K. Mishra, J. Crystal Growth 248, 513 (2003)
5. Z. Bougrioua*, M. Azize, P. Lorenzini, M. Laugt, and H. Haas, phys. stat. sol. (a) 202, 536 (2005)
6. Y. Kumagai*. H. Murakami, Y. Kangawa, and A. Koukitu, phys. stat. sol. (a) 2, 2058 (2005)
7. B. Poti, M.A.Tagliente, A. Passaseo, accepted for publication in "Journal of non crystalline solid Film"
8. Y. Huang, X. D. Chen, S. Fung, C. D. Beling, and C. C. Ling, J.Appl. Phys. 94, 5771 (2003)