A new GaN based field effect Schottky barrier diode with a very low on-voltage operation

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 323-326

  Yoshida, Seikoh ^a   Ikeda, Nariaki ^a   Li, Jiang ^a   Wada, Takahiro ^a   Takehara, Hironari ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

CAPACITANCE-VOLTAGE (C-V); LEAKAGE CURRENT; PINCH-OFF EFFECT; SCHOTTKY METALS;

SCHOTTKY BARRIER DIODES;

EID: 5044226919     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.240038     Document Type: Conference Paper

References (14)

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