Amorphous silicon nitride deposited by hot-wire chemical vapor deposition

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2973-2979

  Liu, Fengzhen ^a   Ward, Scott ^a   Gedvilas, Lynn ^a   Keyes, Brian ^a   To, Bob ^a   Wang, Qi ^a   Sanchez, Errol ^b   Wang, Shulin ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYTIC DECOMPOSITION; DEPOSITION PARAMETERS; HIGH-QUALITY FILMS; LASER SPECTROSCOPY;

AMORPHOUS SILICON; CATALYSIS; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; ETCHING; MIXTURES; OPTIMIZATION; RAPID THERMAL ANNEALING; REFRACTIVE INDEX; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS; THIN FILM TRANSISTORS;

THIN FILMS;

EID: 5044226701     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775046     Document Type: Article

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