LPCVD of silicon nitride from dichlorosilane and ammonia by single wafer rapid thermal processing

Electrochemical and Solid-State Letters

Volumn 4, Issue 5, 2001, Pages

  Teasdale, Dana ^a   Senzaki, Yoshihide ^a   Herring, Robert ^a   Hoeye, Gary ^a   Page, Lawrence ^a   Schubert, Phillip ^a  

^a Thermal Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; CONDENSATION; FILM GROWTH; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SUBSTRATES; THICK FILMS;

DICHLOROSILANE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NITRIDE FILMS;

SILICON NITRIDE;

EID: 0035353109     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1359056     Document Type: Article

References (7)