Coverage properties of silicon nitride film prepared by the Cat-CVD method

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 165-169

  Osono, S ^a,b   Uchiyama, Y ^a   Kitazoe, M ^a   Saito, K ^a   Hayama, M ^a   Masuda, A ^b   Izumi, A ^a   Matsumura, H ^b  

^a ULVAC INC   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Catalytic chemical vapor deposition (Cat CVD); Coverage; Passivation; Silicon nitride

Indexed keywords

CATALYSIS; MICROELECTRONICS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SILICON NITRIDE FILMS;

SILICON NITRIDE;

EID: 0038147201     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00100-7     Document Type: Conference Paper

References (13)

1. Matsumura H., Tachibana H. Appl. Phys. Lett. 47:1985;833.
2. Matsumura H. Appl. Phys. Lett. 51:1987;804.
3. Doyle J., Robertson R., Lin G.H., He M.Z., Gallagher A. J. Appl. Phys. 64:1988;3215.
4. Mahan A.H., Carapella J., Nelson B.P., Crandall R.S., Balberg I. J. Appl. Phys. 69:1991;6728.
5. Matsumura H. Thin Solid Films. 395:2001;1.
6. Matsumura H. J. Appl. Phys. 66:1989;3612.
7. Okada S., Matsumura H. Jpn. J. Appl. Phys. 36:1997;7035.
8. Uchiyama Y., Masuda A., Matsumura H. Thin Solid Films. 395:2001;275.
9. Sato H., Izumi A., Masuda A., Matsumura H. Thin Solid Films. 395:2001;280.
10. Hattori R., Nakamura G., Nomura S., Ichise T., Masuda A., Matsumura H. Technical Digest of the 19th IEEE Gallium Arsenide Integrated Circuit Symposium, Anaheim. 1997;. p. 78.
11. Umeda T., Mochizuki Y., Miyoshi Y., Nashimoto Y. Thin Solid Films. 395:2001;266.
12. Ledermann A., Weber U., Mukherjee C., Schroeder B. Thin Solid Films. 395:2001;61.
13. Sali J.V., Patil S.B., Jadkar S.R., Takwale M.G. Thin Solid Films. 395:2001;66.