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Volumn 2007, Issue , 2007, Pages 342-345

On a computationally efficient approach to boron-interstitial clustering

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; COMPUTER AIDED DESIGN; ION IMPLANTATION; TRANSIENT ANALYSIS;

EID: 39549088884     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430948     Document Type: Conference Paper
Times cited : (5)

References (9)
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    • L. Pelaz et al., "B diffusion and clustering in ion implanted Si: The role of B cluster precursors," Appl. Phys. Lett., vol. 70, no. 17, pp. 2285-2287, 1997.
    • (1997) Appl. Phys. Lett , vol.70 , Issue.17 , pp. 2285-2287
    • Pelaz, L.1
  • 2
    • 0031364550 scopus 로고    scopus 로고
    • Defects and diffusion in silicon processing
    • M.-J. Caturla et al., "Defects and diffusion in silicon processing," in Mat. Res. Soc. Symp. Proc, vol. 469, 1997, pp. 335-340.
    • (1997) Mat. Res. Soc. Symp. Proc , vol.469 , pp. 335-340
    • Caturla, M.-J.1
  • 3
    • 0036454296 scopus 로고    scopus 로고
    • Current understanding and modeling of boron-interstitial clusters
    • P. Pichler, "Current understanding and modeling of boron-interstitial clusters," in Mat. Res. Soc. Symp. Proc, vol. 717, 2002, pp. 103-114.
    • (2002) Mat. Res. Soc. Symp. Proc , vol.717 , pp. 103-114
    • Pichler, P.1
  • 4
    • 0942299446 scopus 로고    scopus 로고
    • Clusters formation in ultralow-energy high-dose boron-implanted silicon
    • F. Cristiano, X. Hebras, N. Cherkashin, A. Claverie, W. Lerch, and S. Paul, "Clusters formation in ultralow-energy high-dose boron-implanted silicon," Appl. Phys. Lett., vol. 83, no. 26, pp. 5407-5409, 2003.
    • (2003) Appl. Phys. Lett , vol.83 , Issue.26 , pp. 5407-5409
    • Cristiano, F.1    Hebras, X.2    Cherkashin, N.3    Claverie, A.4    Lerch, W.5    Paul, S.6
  • 6
    • 0026138906 scopus 로고
    • Transient phosphorus diffusion below the amorphization threshold
    • M. D. Giles, "Transient phosphorus diffusion below the amorphization threshold," J. Electrochem. Soc., vol. 138, no. 4, pp. 1160-1165, 1991.
    • (1991) J. Electrochem. Soc , vol.138 , Issue.4 , pp. 1160-1165
    • Giles, M.D.1
  • 7
    • 45749122668 scopus 로고    scopus 로고
    • Efficient TCAD model for the evolution of interstitial clusters, {311} defects, and dislocation loops in silicon
    • presented, April 9-13, San Francisco, USA
    • N. Zographos, C. Zechner, and I. Avci, "Efficient TCAD model for the evolution of interstitial clusters, {311} defects, and dislocation loops in silicon," presented in Symposium F of the Spring Meeting of the Materials Research Society, April 9-13, 2007, San Francisco, USA.
    • (2007) in Symposium F of the Spring Meeting of the Materials Research Society
    • Zographos, N.1    Zechner, C.2    Avci, I.3
  • 8
    • 21544453382 scopus 로고
    • Diffusion of boron in silicon during postimplantation annealing
    • Feb
    • S. Solmi and F. Baruffaldi, "Diffusion of boron in silicon during postimplantation annealing," J. Appl. Phys., vol. 69, no. 4, pp. 2135-2142, Feb. 1991.
    • (1991) J. Appl. Phys , vol.69 , Issue.4 , pp. 2135-2142
    • Solmi, S.1    Baruffaldi, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.