Monte Carlo simulation of Boron diffusion during low energy implantation and high temperature annealing

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 335-340

  Caturla, M J ^a   Diaz de la Rubia, T ^a   Zhu, J ^a   Johnson, M ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; APPROXIMATION THEORY; BORON; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; ION IMPLANTATION; MOLECULAR DYNAMICS; MONTE CARLO METHODS; SEMICONDUCTOR DOPING;

BINARY COLLISION APPROXIMATION; STILLINGER WEBER MOLECULAR DYNAMICS; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0031364550     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-335     Document Type: Conference Paper

References (25)