Process-induced diffusion phenomena in advanced CMOS technologies

Defect and Diffusion Forum

Volumn 258-260, Issue , 2006, Pages 510-521

  Pichler, Peter ^a,b   Burenkov, Alexander ^a   Lerch, Wilfried ^c   Lorenz, Jürgen ^a   Paul, Silke ^c   Niess, Jürgen ^c   Nenyei, Zsolt ^c   Gelpey, Jeff ^d   McCoy, Steve ^d   Windl, Wolfgang ^e   Giles, Luis Felipe ^f  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c MATTSON THERMAL PRODUCTS GMBH   (United States)

^d Mattson Technology Canada   (Canada)

^e Ohio State University   (United States)

^f INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

CMOS technology; Flash annealing; Hot shield annealing; Numerical modeling; Pattern effects; Process simulation; Transient activation; Transient diffusion

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRON DEVICES; MATHEMATICAL MODELS; RAPID THERMAL ANNEALING; SILICON; TRANSISTORS; ANNEALING; BORON; CHEMICAL ACTIVATION; NUMERICAL MODELS; RAPID THERMAL PROCESSING;

FLASH ANNEALING; HOT SHIELD ANNEALING; NUMERICAL MODELING; PATTERN EFFECTS; PROCESS SIMULATION; TRANSIENT ACTIVATION; TRANSIENT DIFFUSION; CMOS TECHNOLOGY; PATTERN EFFECT; PROCESS SIMULATIONS;

CMOS INTEGRATED CIRCUITS;

EID: 33847300922     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.258-260.510     Document Type: Conference Paper

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