Two-step reactive sputtering of piezoelectric AlN thin films

Surface and Coatings Technology

Volumn 202, Issue 22-23, 2008, Pages 5684-5687

  Cherng, J S ^a   Lin, C M ^a   Chen, T Y ^a  

^a MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Aluminum nitride; Reactive sputtering; Residual stress; Rocking curve

Indexed keywords

FULL WIDTH AT HALF MAXIMUM; MOLECULAR BEAM EPITAXY; RATE CONSTANTS; SCALE (DEPOSITS); SPUTTER DEPOSITION; THICK FILMS; THIN FILMS;

ALN THIN FILMS; ALUMINUM NITRIDE; DISCHARGE POWERS; FILM QUALITIES; FILM-THICKNESS; INDEPENDENT CONTROL; PROCESS PARAMETERS; PULSED-DC REACTIVE; REACTIVE ATMOSPHERES; RESIDUAL STRESS; ROCKING CURVE; WORKING PRESSURES;

REACTIVE SPUTTERING;

EID: 50349094900     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.06.087     Document Type: Article

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