Local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning spread resistance microscopy

IDW '07 - Proceedings of the 14th International Display Workshops

Volumn 2, Issue , 2007, Pages 489-492

  Matsuki, N ^a   Ishihara, R ^a   Baiano, A ^a   Hiroshima, Y ^b   Inoue, S ^b   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON;

COINCIDENCE SITE LATTICE BOUNDARY (CSLB); LATTICE BOUNDARY; SCANNING SPREAD RESISTANCE MICROSCOPY (SSRM);

CRYSTAL LATTICES;

EID: 43349088786     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. R. Ishihara, P.C. van der Wilt, B. D. van Dijk, A. Burtsev, J. W. Metselaar and C. I. M Beenakker: Thin Solid Films 427 (2003) 77.
2. R. Ishihara, Y. Hiroshima, D. Abe, B.D. van Dijk, P. C. van der Wilt, S. Higashi, S. Inoue, T. Shimoda, J. W. Metselaar and C. I. M. Beenakker: IEEE Trans. Electron Devices 51 (2004) 500.
3. R. Ishihara, M. He, V. Rana, Y. Hiroshima, S. Inoue, T. Shimoda, J. W. Metselaar, C. I. M. Beenakker: Thin Solid Films 487 (2005) 97.
4. R. Ishihara, D. Danciu, F. Tichelaar, M. He, Y. Hiroshima, S. Inoue, T. Shimoda, J.W. Metselaar and C.I.M. Beenakker: J. Cryst. Growth 299, (2007) 316.
5. W. Kohn and L. J. Sham: Phys. Rev. A 140 (1965) 1133.