Effect of catalyst film thickness on the growth, microstructure and field emission characteristics of carbon nanotubes

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Volumn , Issue , 2007, Pages 836-839

  Srivastava, Sanjay K ^a   Vankar, V D ^b   Kumar, Vikram ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

CNTs; Diffusion; Field emission; MPECVD

Indexed keywords

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; FIELD EMISSION; FILM GROWTH; MICROWAVES; MULTIWALLED CARBON NANOTUBES (MWCN); NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON;

CNTS; DIFFUSION; EFFECT OF CATALYST; FIELD-EMISSION CHARACTERISTICS; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; MPECVD; MULTI-WALLED CARBON NANOTUBES; SI SUBSTRATES;

CARBON NANOTUBES;

EID: 49749150582     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWPSD.2007.4472650     Document Type: Conference Paper

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