The effect of isoelectronic in-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2385-2388

  Yamaguchi, Shigeo ^a   Kariya, Michihiko ^a   Nitta, Shugo ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

AlGaN; GaN; In doping; MOVPE; PL mapping; Strain; Stress; Tilt

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; STRAIN; STRESSES; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; ISOELECTRONIC INDIUM DOPING; PHOTOLUMINESCENCE EMISSION;

SEMICONDUCTING FILMS;

EID: 0033708033     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2385     Document Type: Article

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