Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 2 A, 2000, Pages 390-392

  Kamiyama, Satoshi ^a   Iwaya, Motoaki ^a   Amano, Hiroshi ^a   Akasak, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

Compositional inhomogeneity; Gain spectrum; GaInN; GaN; Semiconductor laser; Spectral broadening; Spontaneous emission spectrum; Theoretical analysis

Indexed keywords

CURRENT DENSITY; EMISSION SPECTROSCOPY; MATHEMATICAL MODELS; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SPONTANEOUS EMISSION;

FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM INDIUM NITRIDE; SPECTRAL BROADENING;

SEMICONDUCTOR LASERS;

EID: 0033878163     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.390     Document Type: Article

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