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Volumn , Issue , 2008, Pages 763-768

Node criticality computation for circuit timing analysis and optimization under NBTI effect

Author keywords

[No Author keywords available]

Indexed keywords

CRITICALITY (NUCLEAR FISSION); DEGRADATION; DELAY CIRCUITS; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; ELECTRONICS ENGINEERING; NEGATIVE TEMPERATURE COEFFICIENT; NETWORKS (CIRCUITS); OPTIMIZATION; SULFATE MINERALS; THERMODYNAMIC STABILITY; TIME MEASUREMENT;

EID: 49749135199     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2008.4479834     Document Type: Conference Paper
Times cited : (21)

References (25)
  • 1
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    • M. A. Alam. A critical examination of the mechanics of dynamic nbti for pmosfets. In IEEE International Electronic Devices Meeting, pages 14.4.1-14.4.4, 2003.
  • 2
    • 10044266222 scopus 로고    scopus 로고
    • A comprehensive model of PMOS NBTI degradation
    • August
    • M. A. Alam and S. Mahapatra. A comprehensive model of PMOS NBTI degradation. Microelectronics Reliability, 45:71-81, August 2004.
    • (2004) Microelectronics Reliability , vol.45 , pp. 71-81
    • Alam, M.A.1    Mahapatra, S.2
  • 8
    • 49749152406 scopus 로고    scopus 로고
    • http://www.cbl.ncsu.edu/.
  • 9
    • 26444610676 scopus 로고    scopus 로고
    • A new oxide trap-assisted nbti degradation model
    • Sept
    • N. K. Jha and V. R. Rao. A new oxide trap-assisted nbti degradation model. IEEE Electronics Device Letters, 26:687-689, Sept.
    • IEEE Electronics Device Letters , vol.26 , pp. 687-689
    • Jha, N.K.1    Rao, V.R.2
  • 13
    • 33751398442 scopus 로고    scopus 로고
    • Defining statistical sensitivity for timing optimization of logic circuits with large-scale process and environmental variations
    • X. Li, J. Le, M. Celik, and L. T. Pileggi. Defining statistical sensitivity for timing optimization of logic circuits with large-scale process and environmental variations. In IEEE International Conference on Computer Aided Design, pages 843-850, 2005.
    • (2005) IEEE International Conference on Computer Aided Design , pp. 843-850
    • Li, X.1    Le, J.2    Celik, M.3    Pileggi, L.T.4
  • 15
    • 0033280060 scopus 로고    scopus 로고
    • The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on mosfet scaling
    • N. Kimizuka et al. The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on mosfet scaling. In VLSI Symp. On Tech., pages 73-74, 1999.
    • (1999) VLSI Symp. On Tech , pp. 73-74
    • Kimizuka, N.1
  • 17
    • 23844466920 scopus 로고    scopus 로고
    • Impact of NBTI on the temporal performance degradation of digital circuits
    • August
    • B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam, and K. Roy. Impact of NBTI on the temporal performance degradation of digital circuits. IEEE Electronic Device Letters, 26(8):560-562, August 2005.
    • (2005) IEEE Electronic Device Letters , vol.26 , Issue.8 , pp. 560-562
    • Paul, B.C.1    Kang, K.2    Kufluoglu, H.3    Alam, M.A.4    Roy, K.5
  • 18
    • 34047187067 scopus 로고    scopus 로고
    • Temporal performance degradation under NBTI: Estimation and design for improved reliability of nanoscale circuits
    • B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam, and K. Roy. Temporal performance degradation under NBTI: Estimation and design for improved reliability of nanoscale circuits. In ACM/IEEE Design, Automation, and Test Europe, pages 780-785, 2006.
    • (2006) ACM/IEEE Design, Automation, and Test Europe , pp. 780-785
    • Paul, B.C.1    Kang, K.2    Kufluoglu, H.3    Alam, M.A.4    Roy, K.5
  • 19
    • 17644366506 scopus 로고    scopus 로고
    • NBTI reliability analysis for a 90nm CMOS technology
    • J. Puchner and L. Hinh. NBTI reliability analysis for a 90nm CMOS technology. In ESSDERC, pages 257-260, 2004.
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    • Puchner, J.1    Hinh, L.2
  • 20
    • 0041340533 scopus 로고    scopus 로고
    • Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
    • July
    • D. K. Schroder and J. A. Babcock. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing. Journal of Applied Physics, 94(1):1-18, July 2003.
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  • 21
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    • August
    • J. H. Stathis and S. Zafar. A comprehensive model of PMOS NBTI degradation. Microelectronics Reliability, 45:71-81, August 2004.
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    • Stathis, J.H.1    Zafar, S.2
  • 25
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    • W. Zhao and Y. Cao. New generation of predictive technology model for sub-45 nm early design exploration. available at http://www.eas.asu.edu/ ∼ptm. IEEE Tran. on Electron Devices, 53:2816-2823, Nov. 2006.
    • W. Zhao and Y. Cao. New generation of predictive technology model for sub-45 nm early design exploration. available at http://www.eas.asu.edu/ ∼ptm. IEEE Tran. on Electron Devices, 53:2816-2823, Nov. 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.