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Volumn 1, Issue , 2006, Pages

Temporal performance degradation under NBTI: Estimation and design for improved reliability of nanoscale circuits

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; BIAS CURRENTS; RELIABILITY ANALYSIS; SYSTEMS ANALYSIS;

EID: 34047187067     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (133)

References (13)
  • 1
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    • (1999) Dig. Tech. Papers-Symp. VLSI Technology , pp. 73-74
    • Kimizuka, N.1
  • 2
    • 0037005587 scopus 로고    scopus 로고
    • Dynamic. NBTI of p-MOS transistors and its impact on MOSFET scaling
    • Dec
    • G. Chen, M. F. Li, C. H. Ang, J. Z. Zheng, and D. L. Kwong, "Dynamic. NBTI of p-MOS transistors and its impact on MOSFET scaling," IEEE Elec. Dev. Lett., vol. 23, No. 12, pp. 734-736, Dec. 2002.
    • (2002) IEEE Elec. Dev. Lett , vol.23 , Issue.12 , pp. 734-736
    • Chen, G.1    Li, M.F.2    Ang, C.H.3    Zheng, J.Z.4    Kwong, D.L.5
  • 3
    • 0041340533 scopus 로고    scopus 로고
    • Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
    • D. Schroder, and J. F. Babcock, "Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing," J. Appl. Phys., vol. 94, p. 1, 2003.
    • (2003) J. Appl. Phys , vol.94 , pp. 1
    • Schroder, D.1    Babcock, J.F.2
  • 4
    • 0842266651 scopus 로고    scopus 로고
    • A critical examination of the mechanics of dynamic NBTI for PMOSFETs
    • IEDM, pp
    • M. A. Alam, "A critical examination of the mechanics of dynamic NBTI for PMOSFETs," in Intl. Electron Dev. Meeting, (IEDM), pp. 346-349, 2003.
    • (2003) Intl. Electron Dev. Meeting , pp. 346-349
    • Alam, M.A.1
  • 5
    • 1642289216 scopus 로고    scopus 로고
    • Evaluation of NBTI in HfO/sub 2/gate dielectric stacks with tungsten gates
    • Mar
    • S. Zafar, B. H. Lee, and J. Stathis, "Evaluation of NBTI in HfO/sub 2/gate dielectric stacks with tungsten gates," IEEE Elec. Dev. Lett.,vol 25, pp. 153-155, Mar, 2004.
    • (2004) IEEE Elec. Dev. Lett , vol.25 , pp. 153-155
    • Zafar, S.1    Lee, B.H.2    Stathis, J.3
  • 7
    • 34047130415 scopus 로고    scopus 로고
    • A. T. Krishnan, et al., NBTI impact on transistor and circuit: models, mechanisms and scaling effects, in Intl. Electron Dev. Meeting, pp. 14.5.1-14.5.4, 2003.
    • A. T. Krishnan, et al., "NBTI impact on transistor and circuit: models, mechanisms and scaling effects," in Intl. Electron Dev. Meeting, pp. 14.5.1-14.5.4, 2003.
  • 8
    • 23844466920 scopus 로고    scopus 로고
    • Impact of NBTI on the temporal performance degration of digital circuits
    • Aug
    • B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam, and K. Roy, "Impact of NBTI on the temporal performance degration of digital circuits," IEEE Electron Device Letters, vol. 26, n. 8, pp. 560-562, Aug., 2005.
    • (2005) IEEE Electron Device Letters , vol.26 , Issue.8 , pp. 560-562
    • Paul, B.C.1    Kang, K.2    Kufluoglu, H.3    Alam, M.A.4    Roy, K.5
  • 10
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    • http://www-device.eecs.berkeley.edu/ ptm.
  • 11
    • 10044266222 scopus 로고    scopus 로고
    • A comprehensive model of PMOS NBTI degradation
    • M. A. Alam, and S. Mahapatra, "A comprehensive model of PMOS NBTI degradation," Microelectronics Reliability, vol. 45, pp. 71-81, 2005.
    • (2005) Microelectronics Reliability , vol.45 , pp. 71-81
    • Alam, M.A.1    Mahapatra, S.2
  • 12
    • 0031340511 scopus 로고    scopus 로고
    • Power sensitivity - A new method to estimate power dissipation considering uncertain specifications of primary inputs
    • Z. Chen, K. Roy, and T. Chou, "Power sensitivity - A new method to estimate power dissipation considering uncertain specifications of primary inputs", in Intl. Conf. on Computer Aided Design, pp. 40-44, 1997.
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    • Chen, Z.1    Roy, K.2    Chou, T.3
  • 13
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    • Sakurai, T.1    Newton, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.