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Volumn 4, Issue 7, 2007, Pages 2248-2251
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Fully unstrained GaN on sacrificial AlN layers by nano-heteroepitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE LAYERS;
ALGAN/GAN;
ALN FILMS;
ALN LAYERS;
BUCKLING EFFECTS;
COMPRESSIVE STRAINS;
GAN LAYERS;
HETERO-EPITAXY;
HIGH-QUALITY;
III NITRIDES;
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION;
MICRO-ELECTRO MECHANICAL SYSTEMS;
NANO-CRYSTALLINE;
NANOHETEROEPITAXY;
NITRIDE SEMICONDUCTORS;
SACRIFICIAL LAYERS;
SINGLE-CRYSTALLINE;
STRAIN RELAXATION MECHANISM;
COMPOSITE MICROMECHANICS;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
ELECTROMECHANICAL DEVICES;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LATTICE CONSTANTS;
MEMS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MICROELECTROMECHANICAL DEVICES;
MOLECULAR BEAM EPITAXY;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALLINE MATERIALS;
NANOSTRUCTURED MATERIALS;
NITRIDES;
OPTICAL DESIGN;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR MATERIALS;
SPUTTER DEPOSITION;
SYSTEM STABILITY;
THICK FILMS;
EPITAXIAL LAYERS;
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EID: 49749129615
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200674813 Document Type: Conference Paper |
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Times cited : (5)
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References (11)
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