Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1398-1403

  Tong, X L ^a   Jiang, D S ^a   Liu, L ^a   Dai, H ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ARCHITECTURAL ACOUSTICS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTALLINE MATERIALS; EMISSION SPECTROSCOPY; EXCIMER LASERS; FIELD EMISSION; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS LASERS; IMAGING TECHNIQUES; LASERS; MICROSCOPIC EXAMINATION; OPTICAL EMISSION SPECTROSCOPY; OPTICAL MATERIALS; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; PHOTOACOUSTIC EFFECT; PLASTIC COATINGS; POLYMERS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SCANNING PROBE MICROSCOPY; SECONDARY EMISSION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; CRYSTALLINE STRUCTURES; EXCIMER; FEMTO SECONDS; FIELD EMISSION ARRAY; FIELD EMISSION MEASUREMENTS; FIELD-EMISSION CHARACTERISTICS; FLUORESCENCE SPECTRUM; GAN THIN FILMS; LASER-TARGET INTERACTIONS; LOW TEMPERATURE; MICRO-RAMAN SPECTROSCOPY; MICROTIPS; NANOSECOND PULSED LASERS; POLY-CRYSTALLINE; POTENTIAL APPLICATIONS; SEM IMAGING; X-RAY DIFFRACTION;

PROGRAMMABLE LOGIC CONTROLLERS;

EID: 49749126025     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2956631     Document Type: Article

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