Field emission from GaN on Si substrate

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 47-49

  Czarczynski W ^a   Kieszkowski, P ^a   Lasisz St ^a   Paszkiewicz, R ^a   Tlaczala M ^a   Znamirowski, Z ^a   Zolnierz E ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; GRAIN SIZE AND SHAPE; METALLORGANIC VAPOR PHASE EPITAXY; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

FIELD EMITTER ARRAYS;

FIELD EMISSION CATHODES;

EID: 17044460928     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1340665     Document Type: Article

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