P- Zn3 P2 single nanowire metal-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Liu, C ^a   Dai, L ^a   Ma, R M ^a   Yang, W Q ^a   Qin, G G ^a,b  

^a PEKING UNIVERSITY   (China)

^b SOUTH CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; HIGH ELECTRON MOBILITY TRANSISTORS; ION BEAMS; MESFET DEVICES; METALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTOR MATERIALS; THRESHOLD LOGIC; TRANSISTORS;

ENHANCEMENT MODE; GATE BIASES; MAXIMUM TRANSCONDUCTANCE; ON/OFF CURRENT RATIO; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SINGLE NANOWIRE; SOURCE-DRAIN CURRENTS; THRESHOLD GATE VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 49749108986     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2960494     Document Type: Article

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