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Volumn , Issue , 2008, Pages 502-507

A simplified model of Carbon nanotube transistor with applications to analog and digital design

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG DESIGNS; ANALOG DOMAINS; BALLISTIC TRANSPORTS; BIAS CONDITIONS; CARBON NANOTUBE TRANSISTORS; CLOSED-FORM EXPRESSIONS; COMPACT MODELING; DIGITAL DESIGNS; ELECTRONIC DESIGNS; FIRST-ORDER ANALYSIS; INTERNATIONAL SYMPOSIUM; SCHOTTKY BARRIER CONTACTS; SIMPLE MODELING; SIMPLIFIED MODELS;

EID: 49749106010     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2008.4479786     Document Type: Conference Paper
Times cited : (10)

References (16)
  • 3
    • 37049005375 scopus 로고    scopus 로고
    • Compact modeling of carbon nanotube transistor for early stage process-design exploration
    • Aug
    • Balijepalli, A., Sinha, S., and Cao, Y., "Compact modeling of carbon nanotube transistor for early stage process-design exploration", in ISLPED, Aug. 2007, pp. 2-7.
    • (2007) ISLPED , pp. 2-7
    • Balijepalli, A.1    Sinha, S.2    Cao, Y.3
  • 4
    • 0442311241 scopus 로고    scopus 로고
    • A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube Transistors
    • J. Guo, S. Datta., M. Lundstrom. "A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube Transistors," IEEE Transactions on Electron Devices, vol. 51, pp. 172-177, 2004.
    • (2004) IEEE Transactions on Electron Devices , vol.51 , pp. 172-177
    • Guo, J.1    Datta, S.2    Lundstrom, M.3
  • 5
    • 13644274218 scopus 로고    scopus 로고
    • Y. K. Kenji Natori, Tomo Shimizu, Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor, JOURNAL OF APPLIED PHYSICS 97, 034306, 97, pp. 034306-1-7, 2005.
    • Y. K. Kenji Natori, Tomo Shimizu, "Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor," JOURNAL OF APPLIED PHYSICS 97, 034306, vol. 97, pp. 034306-1-7, 2005.
  • 6
    • 37049025042 scopus 로고    scopus 로고
    • Carbon Nanotube Transistor Circuits - Models and Tools for Design and Performance Optimization
    • H.S.P.Wong, J. Deng, A Hazeghi, T. Krishnamohan, G.C.Wan, "Carbon Nanotube Transistor Circuits - Models and Tools for Design and Performance Optimization", ICCAD-2006.
    • ICCAD-2006
    • Wong, H.S.P.1    Deng, J.2    Hazeghi, A.3    Krishnamohan, T.4    Wan, G.C.5
  • 8
    • 34547236228 scopus 로고    scopus 로고
    • Modeling and Análisis of Circuit Performance of Ballistic CNFET
    • B.C. Paul, S. Fujita, M. Okajima, T. Lee, "Modeling and Análisis of Circuit Performance of Ballistic CNFET", DAC 2006.
    • DAC 2006
    • Paul, B.C.1    Fujita, S.2    Okajima, M.3    Lee, T.4
  • 9
    • 42549123107 scopus 로고    scopus 로고
    • A Circuit-Compatible SPICE model for Enhancement Mode Carbon Nanotube Field Effect Transistors
    • J. Deng. H.-S.P. Wong," A Circuit-Compatible SPICE model for Enhancement Mode Carbon Nanotube Field Effect Transistors," SISPAD'06, pp. 166-169.
    • SISPAD'06 , pp. 166-169
    • Deng, J.1    Wong, H.-S.P.2
  • 10
    • 33846818873 scopus 로고    scopus 로고
    • A simple drain current model for Schottky-barrier Carbon nanotube fieldeffect transistors
    • X. C. a. D Jiménez, E Miranda, J Suñé, F A Chaves and S Roche, "A simple drain current model for Schottky-barrier Carbon nanotube fieldeffect transistors," Nanotechnology, 18(2),2007.
    • (2007) Nanotechnology , vol.18 , Issue.2
    • Jiménez, X.C.A.D.1    Miranda, E.2    Suñé, J.3    Chaves, F.A.4    Roche, S.5
  • 12
    • 0000854093 scopus 로고    scopus 로고
    • Band-gap change of carbon nanotubes: Effect of small uniaxial and torsional strain
    • 874-879
    • M. P. A. L. Yang, Jie Han, and J. P. Lu, "Band-gap change of carbon nanotubes: Effect of small uniaxial and torsional strain," PHYSICAL REVIEW B, vol. 60, pp. 13 874-879, 1999.
    • (1999) PHYSICAL REVIEW B , vol.60 , pp. 13
    • Yang, M.P.A.L.1    Han, J.2    Lu, J.P.3
  • 13
    • 0036253371 scopus 로고    scopus 로고
    • Essential Physics of Carrier Transport in Nanoscale MOSFETs
    • M. Lundstrom, Z. Ren, "Essential Physics of Carrier Transport in Nanoscale MOSFETs," IEEE Transactions on Electron Devices, vol. 49, pp. 133-141, 2002.
    • (2002) IEEE Transactions on Electron Devices , vol.49 , pp. 133-141
    • Lundstrom, M.1    Ren, Z.2
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.