메뉴 건너뛰기




Volumn 116-119, Issue , 1999, Pages 916-921

Enhanced deposition rate of high quality stoichiometric ceramic compounds reactively sputter deposited at low pressure by modulating the discharge current at low frequency

Author keywords

Ceramic films; High rate deposition; Reactive sputtering; TiN TiO2

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC DISCHARGES; PRESSURE EFFECTS; SPUTTER DEPOSITION; STOICHIOMETRY; THERMAL EFFECTS; TITANIUM DIOXIDE; TITANIUM NITRIDE;

EID: 0033311625     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00262-5     Document Type: Article
Times cited : (8)

References (23)
  • 12
    • 0038979981 scopus 로고    scopus 로고
    • French Patent 92-15924, 30 December 1992; European Patent 93 403153.5, 23 December 1993; US Patent 08/172,549, 23 December 1993.
    • B. Stauder, F. Perry, A. Billard, P. Pigeat, G. Henrion, C. Frantz, French Patent 92-15924, 30 December 1992; European Patent 93 403153.5, 23 December 1993; US Patent 08/172,549, 23 December 1993.
    • Stauder, B.1    Perry, F.2    Billard, A.3    Pigeat, P.4    Henrion, G.5    Frantz, C.6
  • 20
    • 0040758263 scopus 로고    scopus 로고
    • in preparation.
    • A. Billard, in preparation.
    • Billard, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.