Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2007, Pages

  Ang, Kah Wee ^a,b   Chui, King Jien ^a   Tung, Chih Hang ^b   Samudra, Ganesh ^a   Balasubramanian, N ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DRAIN CURRENT; SILICON; TENSILE STRAIN;

ENHANCED CARRIER TRANSPORT; STRESSORS; TRANSISTOR CHANNELS;

MOSFET DEVICES;

EID: 34548860922     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2007.378954     Document Type: Conference Paper

References (7)

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6. K.-W. Ang et al., Symp. VLSI Tech., 2006, pp. 80-81.
7. Y.-C. Yeo, SSDM, 2005, pp. 162-163.