Control of material interactions in advanced high-κ metal gate stacks

ECS Transactions

Volumn 3, Issue 2, 2006, Pages 175-184

  Wajda, Cory ^a   Leusink, Gert ^a   Akiyama, Koji ^b   Ashigaki, Shigeo ^b   Aoyama, Shintaro ^b   Shimomura, Kouji ^b   Aruga, Miki ^b   Takahashi, Tsuyoshi ^b   Yamazaki, Kazuyoshi ^b   Yamasaki, Hideaki ^b  

^a TEL TECHNOLOGY CENTER   (United States)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); ULTRATHIN FILMS;

GATE ELECTRODE MATERIALS; METAL GATE STACKS; SILICON SUBSTRATES;

MOS CAPACITORS;

EID: 33846973422     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356277     Document Type: Conference Paper

References (6)

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