WSix/WN/polysilicon DRAM gate stack with a 50 Å WN layer as a diffusion barrier and an etch stop

Materials Science in Semiconductor Processing

Volumn 8, Issue 5, 2005, Pages 602-607

  Lee, Heon ^a   Kim, Dong Hwan ^a   Huh, Joo Youl ^a   Kim, Deok Kee ^a  

^a Korea University   (South Korea)

Author keywords

DRAM; Etching; Tungsten nitride; Tungsten silicide

Indexed keywords

ASPECT RATIO; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; ETCHING; GATES (TRANSISTOR); SECONDARY ION MASS SPECTROMETRY; SILICONES; TUNGSTEN COMPOUNDS;

GATE STACK; THIN LAYERS; TUNGSTEN NITRIDE; TUNGSTEN SILICIDE;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 27844503616     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2005.08.001     Document Type: Article

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