Growth kinetics and oxidation behavior of WSi2 coating formed by chemical vapor deposition of Si on W substrate

Journal of Alloys and Compounds

Volumn 420, Issue 1-2, 2006, Pages 199-206

  Yoon, Jin Kook ^a   Lee, Kyung Whan ^a   Chung, Sung Jae ^a   Shon, In Jin ^b   Doh, Jung Mann ^a   Kim, Gyeung Ho ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

Chemical vapor deposition; Growth kinetics and oxidation; WSi2 coating

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; EVAPORATION; OXIDATION; RESIDUAL STRESSES; TUNGSTEN COMPOUNDS;

GROWTH KINETICS AND OXIDATION; ISOTHERMAL OXIDATION; WSI2 COATING;

COATINGS;

EID: 33745713026     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2005.11.002     Document Type: Article

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