High growth rate metal organic vapor phase epitaxy GaN

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3950-3952

  Matsumoto, Koh ^a   Tokunaga, Hiroki ^a   Ubukata, Akinori ^a   Ikenaga, Kazumasa ^a   Fukuda, Yasushi ^a   Tabuchi, Toshiya ^a   Kitamura, Yuichiro ^a   Koseki, Shuichi ^a   Yamaguchi, Akira ^a   Uematsu, Kunimasa ^a  

^a TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

A1. Carbon contamination; A2. Parasitic reaction; A3. MOVPE; B1. GaN

Indexed keywords

ATMOSPHERIC PRESSURE; ATMOSPHERICS; CRYSTAL GROWTH; ECOLOGY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALS; MOLECULAR BEAM EPITAXY; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; VAPORS;

A1. CARBON CONTAMINATION; A2. PARASITIC REACTION; A3. MOVPE; B1. GAN; CARBON CONTAMINATION; HIGH GROWTH RATES; METAL-ORGANIC VAPOR PHASE EPITAXY; X-RAY DIFFRACTION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 49449085239     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.009     Document Type: Article

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