Effects of reactor pressure and residence time on GaN MOVPE growth efficiency

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 605-609

  Lundin, W V ^a   Zavarin, E E ^a   Sizov, D S ^a   Sinitsin, M A ^a   Tsatsul'nikov, A F ^a   Kondratyev, A V ^b   Yakovlev, E V ^b   Talalaev, R A ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

^c Semiconduct Technol Research GmbH   (Germany)

Author keywords

A1 Computer simulation; A1. Nano particles; A1. Planetary reactor; A3. Metalorganic vapor phase epitaxy; B1. GaN; B1. Nitrides

Indexed keywords

COMPUTER SIMULATION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PRESSURE EFFECTS; SUBSTRATES;

FLOW RATE EVIDENCES; GAN MOVPE GROWTH EFFICIENCY; PLANETARY REACTOR; V GROUP PRECURSORS;

NANOSTRUCTURED MATERIALS;

EID: 30344445690     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.084     Document Type: Conference Paper

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