III-V nitride growth by atmospheric-pressure MOVPE with a three-layered flow channel

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 129-134

  Uchida, K ^a   Tokunaga, H ^a   Inaishi, Y ^a   Akutsu, N ^a   Matsumoto, K ^a   Itoh, T ^a   Egawa, T ^a   Jimbo, T ^a   Umeno, M ^a  

^a TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; LAMINAR FLOW; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

GALLIUM NITRIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030651745     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)