Performance of multiwafer reactor GaN MOCVD system

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 616-621

  Tokunaga, H ^a   Tan, H ^a   Inaishi, Y ^a   Arai, T ^a   Yamaguchi, A ^a   Hidaka, J ^a  

^a Technical Service Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS;

ALUMINUM GALLIUM NITRIDES; FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM NITRIDE; INDIUM GALLIUM NITRIDES;

SEMICONDUCTING FILMS;

EID: 0034511244     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00788-0     Document Type: Article

References (13)

1. Dingle R., Sell D.D., Stokowski S.E., Ilegems M. Phys. Rev. B. 4:1971;1211.
2. Maruska H.P., Tietjen J.J. Appl. Phys. Lett. 15:1969;327.
3. Dingle R., Shaklee K.L., Leheny R.F., Zetterstrom R.B. Appl. Phys. Lett. 19:1971;5.
4. Nakamura S., Mukai T., Senoh M., Iwasa N. Jpn. J. Appl. Phys. 74:1993;3911.
5. Nakamura S., Senoh M., Iwasa N., Ngahama S., Yamada T., Mukai T. Jpn. J. Appl. Phys. 34:1995;1332.
6. Nakamura S., Senoh M., Ngahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y. Jpn. J. Appl. Phys. 35:1996;74.
7. Nakamura S., Senoh M., Ngahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kazaki T., Uemoto H., Sato M., Chocho K. Jpn. J. Appl. Phys. 36:1997;1568.
8. Nakamura S., Senoh M., Ngahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kazaki T., Uemoto H., Sato M., Chocho K. Jpn. J. Appl. Phys. 37:1998;627.
9. Nakamura S. J. Crystal Growth. 195:1998;242.
10. Duboz J.-Y. Phys. Stat. Sol. 5:1999;176.
11. von Eichel-Streiber C., Schon O., Beccard R., Schmitz D., Heuken M., Jurgensen H. J. Crystal Growth. 189/190:1998;344.
12. Tra C.A., Karlicek R.F. Jr., Brown M.G., Eliashevich I., Gurary A., Schurman M., Stall R. Phys. Stat. Sol. A. 176:1999;91.
13. Tokunaga H., Waki I., Yamaguchi N., Akutsu N., Matsumoto K. J. Crystal Growth. 189/190:1998;519.