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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 360-369

Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: Gas phase chemistry and its impact on reactor design

(2) Matsumoto, Koh a Tachibana, Akitomo b

a TAIYO NIPPON SANSO CORPORATION (Japan)

b KYOTO UNIVERSITY (Japan)

Author keywords

A3. Chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; Al. Gas phase chemistry; B1. AlGaN; B1. GaN

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM ALLOYS; LAMINAR FLOW; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; OLIGOMERS;

ALGAN; GAS-PHASE CHEMISTRY; TRIMETHYL-ALUMINIUM (TMA); TRIMETHYL-GALLIUM (TMG);

GALLIUM NITRIDE;

EID: 9944260270 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.115 Document Type: Conference Paper

Times cited : (54)

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