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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 348-352

Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system

(7) Tokunaga, H a Ubukata, A a Yano, Y a Yamaguchi, A a Akutsu, N a Yamasaki, T a Matsumoto, K a

a TAIYO NIPPON SANSO CORPORATION (Japan)

Author keywords

A1. Mg doping; A1. Parasitic reaction; A2. Atmospheric pressure growth; A3. Metalorganic vapor phase epitaxy; B1. AlGaN; B1. GaN

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LAMINAR FLOW; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM WELLS;

ALGAN; ATMOSPHERIC PRESSURE GROWTH; MG DOPING; PARASITIC REACTION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 9944219953 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.017 Document Type: Conference Paper

Times cited : (19)

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