Influence of crystal quality on the piezoresistive effect of β-SiC between RT and 450°C measured by using microstructures

International Conference on Solid-State Sensors and Actuators, Proceedings

Volumn 2, Issue , 1997, Pages 1439-1442

  Strass, Juergen ^a   Eickhoff, Martin ^a   Kroetz, Gerhard ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SUBSTRATES; TEMPERATURE;

BRAGG REFLECTION; CRYSTAL QUALITY; GAUGE FACTOR; MICROMANIPULATOR; PIEZORESISTIVE EFFECT; PIEZORESISTORS;

SILICON CARBIDE;

EID: 0030655310     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)