Selective growth of high-quality 3C-SiC using a SiO2 sacrificial-layer technique

Thin Solid Films

Volumn 345, Issue 2, 1999, Pages 197-199

  Eickhoff, M ^a   Moller H ^a   Rapp, M ^a   Kroetz, G ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; POLYCRYSTALLINE MATERIALS; SILICA; SILICON;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON CARBIDE;

EID: 0345148970     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00233-3     Document Type: Article

References (8)

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3. Richter C., Espertshuber K., Wagner C., Eickhoff M., Kroetz G. Mater. Sci. Eng. B. 46:1997;160.
4. Shor J.S., Zhang X.G., Ruberto M.N., Osgood R.M. Springer Proc. Phys. 56:1992;191.
5. Tong L., Mehregany M. Appl. Phys. Lett. 60:(24):1992;2992.
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7. Yhi P.H., Li J.P., Steckl A.J. IEEE Trans. Electr. Devices. 41:(3):1994;281.
8. Möller H., Eickhoff M., Rapp M., Grüninger H.W., Kroetz G. Appl. Phys. A. 68:1999;461.