Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane

Journal of the Electrochemical Society

Volumn 151, Issue 9, 2004, Pages

  Chiang, Chiu Chih ^a   Chen, Mao Chieh ^a   Li, Lain Jong ^b   Wu, Zhen Cheng ^b   Jang, Syun Ming ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPOSITION; DIELECTRIC FILMS; DIFFUSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; MIS DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SPUTTER DEPOSITION; VAPOR PRESSURE;

BIAS-TEMPERATURE-STRESS (BTS) TEST; DIELECTRIC BARRIERS; RESISTANCE-CAPACITANCE (RC) DELAY; THERMAL EVAPORATION SYSTEMS;

AMORPHOUS SILICON;

EID: 4944235009     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1778169     Document Type: Article

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