Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides

Microelectronics Reliability

Volumn 39, Issue 2, 1999, Pages 171-179

  Jackson, J C ^a   Oralkan, Ö ^b   Dumin, D J ^a   Brown, G A ^c  

^a CLEMSON UNIVERSITY   (United States)

^b Stanford University   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; OXIDES; SILICON COMPOUNDS; ULTRATHIN FILMS;

SILICON OXIDE; TIME-DEPENDENT-ELECTRIC-BREAKDOWN (TDEB);

DIELECTRIC FILMS;

EID: 0032664588     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00236-4     Document Type: Article

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