Effects of n -type 4H-SiC epitaxial wafer quality on reliability of thermal oxides

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6182-6184

  Senzaki, Junji ^a   Kojima, Kazutoshi ^a   Fukuda, Kenji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; POLYSILICON; SURFACE ROUGHNESS; WEIBULL DISTRIBUTION;

EPITAXIAL WAFERS; ROOM TEMPERATURE; THERMAL OXIDES; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB); TIME-ZERO DIELECTRIC BREAKDOWN (TZDB);

SILICON CARBIDE;

EID: 20644457719     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1839279     Document Type: Article

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