A MEMS device for in-situ TEM test of SCS nanobeam

Science in China, Series E: Technological Sciences

Volumn 51, Issue 9, 2008, Pages 1491-1496

  Jin, QinHua ^a,b   Wang, YueLin ^a,b   Li, Tie ^a   Li, XinXin ^a   Xu, FangFang ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

In situ tensile testing; MEMS; SCS nanobeam; TEM

Indexed keywords

ACTUATORS; BEAMS AND GIRDERS; COMPOSITE MICROMECHANICS; CRYSTAL ATOMIC STRUCTURE; ELECTRON BEAMS; ELECTRON OPTICS; MATERIALS SCIENCE; MECHANICAL PROPERTIES; MEMS; MICROELECTROMECHANICAL DEVICES; NANOSTRUCTURES; NANOWIRES; NONMETALS; OPTICAL DESIGN; PARTICLE BEAMS; SILICON; SILICON WAFERS; SINGLE CRYSTALS; STRESSES; TESTING; WAFER BONDING;

ATOMIC SCALES; BULK MICRO-MACHINING; COMB DRIVES; COMB-DRIVE ACTUATORS; ELECTRON-BEAM; FORCE SENSORS; IN-SITU; IN-SITU TEM; IN-SITU TENSILE TESTING; MEMS DEVICES; NANO BEAMS; ON CHIPS; QUANTITATIVE INFORMATION; SAMPLE DEFORMATION; SCS NANOBEAM; SINGLE-CRYSTAL-SILICON; SIZE EFFECTS; TEM; TENSILE TESTS; TRANSMISSION ELECTRON; WAFER BONDING TECHNIQUES; YOUNG'S MODULUS;

TENSILE TESTING;

EID: 49249101941     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-008-0123-8     Document Type: Article

References (14)

1. Namazu T, Isono Y, Tanaka T. Evaluation of size effect on mechanical properties of single crystal silicon by nanoscale bending test using AFM. J Microelectromech Syst, 2000, 9: 450-459
2. Virwani K R, Malshe A P, Schmidt W F, et al. Fabrication and testing of nanomechanical <100> silicon beam sructures using a scanning probe system. Proceedings of SPIE, 2002. 4936: 50-57
3. Sundararajan S, Bhushan B, Namazu T, et al. Mechanical property measurements of nanoscale structures using an atomic force microscope. Ultramicroscopy, 2002, 91: 111-118
4. Sundararajan S, Bhushan B. Development of AFM-based techniques to measure mechanical properties of nanoscale structures. Sens Actuat A, 2002, 101: 338-351
5. Paulo A S, Bokor J, Howe R T, et al. Mechanical elasticity of single and double clamped silicon nanobeams fabricated by the vapor-liquid-solid method. Appl Phys Lett,2005, 87: 053111
6. Hoffmann S, Utke I, Moser B, et al. Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires. Nano Lett,2006, 6: 622-625
7. Li X X, Ono T, Wang Y L, et al. Ultrathin single-crystalline-silicon cantilever resonators: fabrication technology and significant specimen size effect on Young's modulus. Appl Phys Lett, 2003, 83: 3081-3083
8. Kizuka T, Takatani Y, Asaka K, et al. Measurements of the atomistic mechanics of single crystalline silicon wires of nanometer width. Phys Rev B, 2005, 72: 035333
9. Li D, Wu Y, Kim P, et al. Thermal conductivity of individual silicon nanowires. Appl Phys Lett, 2003, 83: 2934-2936
10. x nanostructures. Phys Rev B, 1996, 54: 5029-5037
11. Haque M A, Saif M T A. In-situ tensile testing of nano-scale specimens in SEM and TEM. Exp Mech, 2002, 42: 123-128
12. Haque M A, Saif M T A. Application of MEMS force sensors for in situ mechanical characterization of nano-scale thin films in SEM and TEM. Sens Actuat A, 2002, 97-98: 239-245
13. Zhu Y, Espinosa H D. An electromechanical material testing system for in situ electron microscopy and applications. Proc Natl Acad Sci USA, 2005, 102: 14503-14508
14. Bao M H. Analysis and Design Principles of MEMS Devices. Amsterdam: Elsevier, 2005