Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices

Microelectronic Engineering

Volumn 85, Issue 8, 2008, Pages 1728-1731

  Magnone, P ^a,b   Subramanian, V ^b,c   Parvais, B ^b   Mercha, A ^b   Pace, C ^a   Dehan, M ^b   Decoutere, S ^b   Groeseneken, G ^b,c   Crupi, F ^a   Pierro, S ^a  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Carrier mobility; FinFET; Series resistance

Indexed keywords

CIVIL AVIATION; FINS (HEAT EXCHANGE); GATES (TRANSISTOR); GEOMETRY; HEALTH; MODULATION;

CARRIER (CO); FIN WIDTHS; FINFET DEVICES; FINFETS; GATE VOLTAGE DEPENDENCE; GATE VOLTAGES; SERIES RESISTANCE (ESR); SIMPLE METHODS;

CARRIER MOBILITY;

EID: 48949116073     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.022     Document Type: Article

References (18)

1. Moore G. IEDM Tech. Digest (1975) 11-13
2. Wong H.-S.P. IBM J. Res. Develop. (2002) 133-168
3. Taur Y., Buchanan D.A., Chen W., Frank D.J., Ismail K.E., Lo S.-H., Sai-Halasz G.A., Viswanathan R.G., Wann H.-J.C., Wind S.J., and Wong H.-S.P. Proc. IEEE 85 4 (1997) 486-504
4. Sekigawa T., and Hayashi Y. Solid State Electron. 27 8-9 (1984) 827-828
5. H.-S.P. Wong, Novel device options for sub-100 nm CMOS, in: M. Bohr, Ed., IEDM Short Course: Sub-100 nm CMOS, presented at the IEEE International Electron Devices Meeting, 1999.
6. Hisamoto D., Wen-Chin L., Kedzierski J., Takeuchi H., Asano K., Kuo C., Anderson E., Tsu-Jae K., Bokor J., and Chenming H. IEEE Trans. Electron Dev. 47 12 (2000) 2320-2325
7. Dixit A., Kottantharayil A., Collaert N., Goodwin M., Jurczak M., and De Meyer K. IEEE Trans. Electron Dev. 52 6 (2005) 1132-1140
8. Terada K., and Muta H. Jap. JAP. 18 5 (1979) 953-959
9. Schroder D.K. Semiconductor Material and Device Characterization (1998), John Wiley & Sons, Inc. p. 544
10. Romanjek K., Andrieu F., Ernst T., and Ghibaudo G. IEEE Electron Dev. Lett. 25 8 (2004) 583-585
11. Schmitz J., Cubaynes F.N., Havens R.J., de Kort R., Scholten A.J., and Tiemeijer L.F. IEEE Electron Dev. Lett. 24 1 (2003) 37-39
12. Hu G.U., Chang C., and Chia Y.-T. IEEE Trans. Electron Dev. 34 12 (1987) 2469-2475
13. Sheu B.J., Hu C., Ko P.K., and Hsu F.-C. IEEE Trans. Electron Dev. 5 9 (1984) 365-367
14. Fossum J.G., Yang J.-W., and Trivedi V.P. IEEE Electron Dev. Lett. 24 12 (2003) 745-747
15. Seung-Hwan K., Fossum J.G., and Trivedi V.P. IEEE Trans. Electron Dev. 52 12 (2005) 1993-1997
16. Taur Y. IEEE Electron Dev. Lett. 21 5 (2000) 245-247
17. Takagi S., Toriumi A., Iwase M., and Tango H. IEEE Trans. Electron Dev. 41 12 (1994) 2363-2368
18. Takagi S., Toriumi A., Iwase M., and Tango H. IEEE Trans. Electron Dev. 41 12 (1994) 2357-2362