Material modification of the patterned wafer during dry etching and strip determined by XPS

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 267-273

  Furukawa, Y ^a   Patz, M ^b   Kokubo, T ^b   Snijders, J H M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b JSR CORPORATION   (Japan)

Author keywords

Damascene; Low k dielectrics; Modification; Plasma; Sidewall; XPS

Indexed keywords

FLUORINE; PASSIVATION; PLASMA ETCHING; SILICA; SILICON CARBIDE; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

SIDEWALLS;

DIELECTRIC MATERIALS;

EID: 0142011574     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00381-2     Document Type: Conference Paper

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