High-power low-beam divergence edge-emitting semiconductor lasers with 1- and 2-D photonic bandgap crystal waveguide

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1113-1122

  Maximov, Mikhail V ^a,b   Shernyakov, Yuri M ^a,b   Novikov, Innokenty I ^b   Karachinsky, Leonid Ya ^b,c   Gordeev, Nikita Yu ^b   Ben Ami, Udi ^d   Bortman Arbiv, Dafna ^d   Sharon, Avner ^d   Shchukin, Vitaly A ^c,e   Ledentsov, Nikolai N ^c,e   Kettler, Thorsten ^c   Posilovic, Kristijan ^c   Bimberg, Dieter ^c  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d PBC Lasers Ltd   (Israel)

^e VI SYSTEMS GMBH   (Germany)

Author keywords

High power laser; Longitudinal photonic bandgap crystal; Low beam divergence; Quantum well; Semiconductor laser arrays; Semiconductor lasers

Indexed keywords

ENERGY GAP; LASERS; OPTICAL WAVEGUIDES; POWDERS; SEMICONDUCTOR LASERS; SPONTANEOUS EMISSION; TWO DIMENSIONAL; WAVEGUIDES;

ALGAINP; BEAM DIVERGENCE; CONTINUOUS-WAVE; CW OUTPUT POWER; DIFFERENTIAL QUANTUM EFFICIENCY; EDGE-EMITTING LASERS; EDGE-EMITTING SEMICONDUCTOR; FAR FIELDS; FUNDAMENTAL MODES; GAAS/ALGAAS; HIGH POWERS; HIGH-POWER LASER; LONGITUDINAL PHOTONIC BANDGAP CRYSTAL; LOW-BEAM DIVERGENCE; MATERIAL SYSTEMS; MULTI LAYERING; MULTI MODES; OUTPUT POWERS; PHOTONIC BAND-GAP CRYSTALS; PULSED MODES; QUANTUM WELL; SEMICONDUCTOR LASER ARRAYS; SINGLE LATERAL MODE; SINGLE MODES; SPOT SIZES;

CONTINUOUS WAVE LASERS;

EID: 48949095230     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.916534     Document Type: Article

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