660-nm GaInp-AlGaInp quantum-well laser diode structures with reduced vertical beam divergence angle

IEEE Photonics Technology Letters

Volumn 17, Issue 3, 2005, Pages 534-536

  Cho, Soohaeng ^a   Park, Yongjo ^a   Kim, Youngmin ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

Laser beams; Quantum well (QW) lasers; Semiconductor lasers

Indexed keywords

CLADDING (COATING); COMPUTER SIMULATION; LASER BEAMS; OPTICAL DESIGN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; GALLIUM INDIUM PHOSPHIDE; LASER DIODE STRUCTURES; OPTICAL CONFINEMENT FACTOR; VERTICAL BEAM DIVERGENCE ANGLE;

QUANTUM WELL LASERS;

EID: 14844354900     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.842324     Document Type: Article

References (8)

1. K. Itaya, M. Ishikawa, K. Nitta, M. Okajima, and G. Hatakoshi, "Highly reliable transverse-mode stabilized InGaAlP visible light laser diodes at high-power operation," Jpn. J. Appl. Phys., vol. 30, pp. L590-L629, Apr. 1991.
2. W. L. Li, Y. K. Su, S. J. Chang, C. S. Chang, and C. Y. Tsai, "Design of AlGaInP visible lasers with a low vertical divergence angle," Solid-State Commun., vol. 42, pp. 87-90, Jan. 1998.
3. P. M. Smowton, G. M. Lewis, M. Yin, H. D. Summers, G. Berry, and C. C. Button, "650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers," IEEE J. Sel. Topics Quantum Electron., vol. 5, no. 3, pp. 735-739, May/June 1999.
4. K. Shigihara, K. Kawasaki, Y. Yoshida, S. Yamamura, T. Yagi, and E. Omura, "High-power 980-nm ridge waveguide laser diodes including an asymmetrically expanded optical field normal to the active layer," IEEE J. Quantum Electron., vol. 38, no. 8, pp. 1081-1088, Aug. 2002.
5. Y. Yoshida, H. Nishiguchi, M. Sasaki, S. Abe, A. Ohno, M. Miyasita, K.-I. Ohno, T. Yagi, and E. Omura, "Vertical beam quality of 660 nm AlGaInP laser diodes with asymmetric cladding layer," in Proc. 3rd IEEE Int. Conf. Numerical Simulation of Semiconductor Optoelectronic Devices, 2003, pp. 39-40.
6. T. Yagi, H. Nishiguchi, Y. Yoshida, M. Miyashita, M. Sasaki, Y. Sakamoto, K.-I. Ono, and Y. Mitsui, "High-power high efficiency 660-nm laser diodes for DVD-R/RW," IEEE J. Sel. Topics Quantum Electron. vol. 9, no. 5, pp. 1260-1264, Sep./Oct. 2003.
7. R. Hiroyama, D. Inoue, S. Kameyama, A. Tahiri, M. Shono, M. Sawada, and A. Ibaraki, "High-power 200 mW 660 nm AlGaInP laser diodes with low operating current" Jpn. J. Appl. Phys., vol. 43, pp. 1951-1955, 2004.
8. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.