High-power diode lasers with small vertical beam divergence emitting at 808 nm

Electronics Letters

Volumn 37, Issue 16, 2001, Pages 1024-1026

  Wenzel, H ^a   Bugge, F ^a   Erbert, G ^a   Hulsewede R ^a   Staske, R ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; LASER BEAM EFFECTS; LIGHT REFLECTION; OPTICAL MULTILAYERS; OPTICAL WAVEGUIDES; SEMICONDUCTOR LASERS;

CATASTROPHIC OPTICAL DAMAGE; HIGH INDEX REFLECTING LAYERS; HIGH POWER DIODE LASERS; QUARTER WAVE REFLECTING LAYERS; THRESHOLD CURRENT DENSITY; VERTICAL BEAM DIVERGENCE;

HIGH POWER LASERS;

EID: 0035797507     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010712     Document Type: Article

References (7)

1. Design of high-power strained InGaGs/AlGaAs quantum-well lasers with a vertical divergence angle of 18°
2. Low-loss coupling of 980 nm GaAs laser to cleaved singlemode fibre
3. 980 nm spread index laser with strain compensated InGaAs/GaAsP/InGaP and 90% fibre coupling efficiency
4. Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
5. 0.3 W CW single-spatial-mode operation from large-core ARROW-type diode lasers
6. Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 nm and 840 nm
7. Influence of current spreading on the transparency current density of quantum-well lasers